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| RS1E200AH nch 30v 20a power mosfet datasheet l l outline v dss 30 v hsop8 r ds(on) (max.) 5.2 m i d 20 a p d 3 w l l inner circuit l l features 1) low on - resistance. 2) high power package (hsop8). 3) pb-free lead plating ; rohs compliant. 4) halogen free. 5) 100% rg and uis tested. l l packaging specifications type packing embossed tape reel size (mm) 330 l l application tape width (mm) 12 switching basic ordering unit (pcs) 2500 taping code tb marking rs1e200 ah l l absolute maximum ratings (t a = 25c) parameter symbol value unit drain - source voltage v dss 30 v continuous drain current i d 20 a pulsed drain current i d,pulse *1 80 a gate - source voltage v gss 12 v power dissipation p d *2 3 w junction temperature t j 150 range of storage temperature t stg -55 to + 150 www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 1/11 20140311 - rev. 001
RS1E200AH datasheet thermal resistance parameter symbol values unit min. typ. max. thermal resistance, junction - ambient r thja *2 - 41.7 - /w electrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. drain - source breakdown voltage v (br)dss v gs = 0 v, i d = 1 ma 30 - - v breakdown voltage temperature coefficient v (br)dss i d = 1 ma - 26.2 - mv/ t j referenced to 25 zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v - - 1 a gate - source leakage current i gss v gs = 12 v, v ds = 0 v - - 100 na gate threshold voltage v gs(th) v ds = 10 v, i d = 1 ma 1.0 - 2.5 v gate threshold voltage temperature coefficient v gs(th) i d = 1 ma - -3.44 - mv/ t j referenced to 25 static drain - source on - state resistance r ds(on) *3 v gs = 10 v, i d = 20 a - 4.3 5.2 m v gs = 4.5 v, i d = 20 a - 5.1 6.1 gate input resistance r g - 1.8 - transconductance g fs *3 v ds = 5 v, i d = 20 a 16 - - s *1 pw Q 10 s , duty cycle Q 1% *2 mounted on 40mm40mm cu board *3 pulsed www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 2/11 20140311 - rev. 001 RS1E200AH datasheet electrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. input capacitance c iss v gs = 0 v - 3100 - pf output capacitance c oss v ds = 15 v - 290 - reverse transfer capacitance c rss f = 1 mhz - 190 - turn - on delay time t d(on) *3 v dd ? 15 v,v gs = 10 v - 21 - ns rise time t r *3 i d = 10 a - 4.9 - turn - off delay time t d(off) *3 r l = 1.5 - 105 - fall time t f *3 r g = 10 - 26 - gate charge characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. total gate charge q g *3 v dd ? 15 v i d = 20 a v gs = 10 v - 55 - nc v gs = 4.5 v - 25 - gate - source charge q gs *3 - 9.5 - gate - drain charge q gd *3 - 6.5 - body diode electirical characteristics (source-drain) (t a = 25c) parameter symbol conditions values unit min. typ. max. body diode continuous forward current i s t a = 25 - - 2.5 a body diode pulse current i sp *1 - - 80 forward voltage v sd *3 v gs = 0 v, i s = 2.5 a - - 1.2 v www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 3/11 20140311 - rev. 001 RS1E200AH datasheet electrical characteristic curves fig.1 power dissipation derating curve fig.2 maximum safe operating area fig.3 normalized transient thermal resistance vs. pulse width fig.4 single pulse maximum power dissipation www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 4/11 20140311 - rev. 001 datasheet fig.5 typical output characteristics(i) fig.6 typical output characteristics(ii) fig.7 breakdown voltage vs. junction temperature www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 5/11 datasheet fig.8 typical transfer characteristics fig.9 gate threshold voltage vs. junction temperature fig.10 tranceconductance vs. drain current www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 6/11 datasheet fig.11 drain current derating curve fig.12 static drain - source on - state resistance vs. gate source voltage fig.13 static drain - source on - state resistance vs. junction temperature www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 7/11 datasheet fig.14 static drain - source on - state resistance vs. drain current(i) fig.15 static drain - source on - state resistance vs. drain current(ii) fig.16 typical capacitance vs. drain - source voltage www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 8/11 datasheet fig.17 switching characteristics fig.18 dynamic input characteristics fig.19 source current vs. source drain voltage www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 9/11 RS1E200AH datasheet measurement circuits fig.1-1 switching time measurement circuit fig.1-2 switching waveforms fig.2-1 gate charge measurement circuit fig.2-2 gate charge waveform www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 10/11 20140311 - rev. 001 RS1E200AH datasheet dimensions www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 11/11 20140311 - rev. 001 |
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